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Prikaz rezultata 11-14 od 14
Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
The aim of this paper is to find the possibility for improvement of gas-filled surge arresters (GFSA) characteristics in y and X radiation field by appropriate choice of electrode materials. For that purpose electrodes ...
Electrodeposited hydroxyapatite thin films modified by ion beam irradiation
(Natl Inst Optoelectronics, Bucharest-Magurele, 2009)
Surface modification of hydroxyapatite (HA) thin films electrodeposited on titanium was conducted by ion implantation, using nitrogen and argon ions at different constant fluences of 1x10(15), 1x10(16) and 1x10(17) ions/cm(2). ...
Novel approach to the investigation of carriers' concentration in various semiconductor structures
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term ...
New analytical HFET I-V characteristics model
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET ...