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Spectroscopy study of Bi12GeO20 single crystals
(Natl Inst Optoelectronics, Bucharest-Magurele, 2013)
In this work single crystals of bismuth germanium oxide (Bi12GeO20) have been grown by the Czochralski method. Growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable ...
Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
(Natl Inst Optoelectronics, Bucharest-Magurele, 2011)
This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by ...
4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
(Natl Inst Optoelectronics, Bucharest-Magurele, 2013)
4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right ...
Growth, characterization and optical quality of calcium fluoride single crystals grown by the Bridgman method
(Natl Inst Optoelectronics, Bucharest-Magurele, 2016)
Calcium fluoride - CaF2 single crystals were grown using the Bridgman technique. By optimizing growth conditions, lt 111 gt -oriented CaF2, crystals up to 20 mm in diameter were grown. Number of dislocations in CaF2 ...
A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
(Natl Inst Optoelectronics, Bucharest-Magurele, 2016)
A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel ...