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Conduction mechanism based model of organic field effect transistor structure
dc.creator | Šašić, Rajko | |
dc.creator | Lukić, Petar M. | |
dc.date.accessioned | 2021-03-10T10:38:18Z | |
dc.date.available | 2021-03-10T10:38:18Z | |
dc.date.issued | 2007 | |
dc.identifier.issn | 0255-5476 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1012 | |
dc.description.abstract | Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature. | en |
dc.publisher | 8th Conference of the Yugoslav Materials Research Society | |
dc.rights | restrictedAccess | |
dc.source | Materials Science Forum | |
dc.subject | carrier mobility model | en |
dc.subject | electrical characteristics | en |
dc.subject | organic TFT model | en |
dc.subject | simulation | en |
dc.title | Conduction mechanism based model of organic field effect transistor structure | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 130 | |
dc.citation.other | 555: 125-130 | |
dc.citation.rank | M23 | |
dc.citation.spage | 125 | |
dc.citation.volume | 555 | |
dc.identifier.doi | 10.4028/0-87849-441-3.125 | |
dc.identifier.pmid | ||
dc.identifier.scopus | 2-s2.0-38349078604 | |
dc.identifier.wos | 000249653700019 | |
dc.type.version | publishedVersion |
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