This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.
TY - JOUR
AU - Stanković, Srboljub J.
AU - Ilić, R. D.
AU - Janković, Ksenija
AU - Vasić-Milovanović, A.
AU - Lončar, Boris
PY - 2011
UR - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/5629
AB - This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.
PB - Polish Acad Sciences Inst Physics, Warsaw
T2 - Acta Physica Polonica A
T1 - Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo
EP - 255
IS - 2
SP - 252
VL - 120
DO - 10.12693/APhysPolA.120.252
ER -
@article{
author = "Stanković, Srboljub J. and Ilić, R. D. and Janković, Ksenija and Vasić-Milovanović, A. and Lončar, Boris",
year = "2011",
abstract = "This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.",
publisher = "Polish Acad Sciences Inst Physics, Warsaw",
journal = "Acta Physica Polonica A",
title = "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo",
pages = "255-252",
number = "2",
volume = "120",
doi = "10.12693/APhysPolA.120.252"
}
Stanković, S. J., Ilić, R. D., Janković, K., Vasić-Milovanović, A.,& Lončar, B.. (2011). Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A
Polish Acad Sciences Inst Physics, Warsaw., 120(2), 252-255.
https://doi.org/10.12693/APhysPolA.120.252
Stanković SJ, Ilić RD, Janković K, Vasić-Milovanović A, Lončar B. Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A. 2011;120(2):252-255.
doi:10.12693/APhysPolA.120.252 .
Stanković, Srboljub J., Ilić, R. D., Janković, Ksenija, Vasić-Milovanović, A., Lončar, Boris, "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo" in Acta Physica Polonica A, 120, no. 2 (2011):252-255,
https://doi.org/10.12693/APhysPolA.120.252 . .
