Претраживање
Приказ резултата 1-6 од 6
Microstructure-property relations for porous bismuth films
(IEEE, 1999)
Metallorganic decomposition of metal carboxylates is used to prepare porous thin films of bismuth. The general approach is to spin coat a precursor solution, bismuth 2-ethylhexanoate in a solvent of 2-methyl-1-propanol on ...
PVD growth of FCC metal films on single crystal Si and Ge substrates
(Materials Research Society, 1999)
Epitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological ...
Raman scattering and infrared absorption in multiple boron-doped Ge dots
(American Institute of Physics Inc.American Vacuum Society, 1999)
Multiple boron-doped Ge quantum dots are investigated. The structure, which consists of 20 periods of Ge quantum dots stacked with 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. ...
Raman scattering from a self-organized Ge dot superlattice
(American Institute of Physics Inc., 1999)
We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source ...
Temperature Dependent Thermal Conductivity of Symmetrically Strained Si/Ge Superlattices
(ASME (American Society of Mechanical Engineers), 1999)
Experimental evidence for a significant thermal conductivity reduction has been reported in recent years for GaAs/AlAs, Si/Ge, and Bi2Te3/Sb2Te3 superlattices. Previously reported experimental studies on Si/Ge superlattices ...
Kombinacija tečne hromatografije i spektroskopskih metoda za analizu mankozeba u malinama / Analysis of Mancozeb in Raspberry by HPLC-ICP-AES
(Beograd : Srpsko hemijsko društvo, 1999)