TY  - JOUR
AU  - Liu, Jianlin L.
AU  - Tang, Yinsheng S.
AU  - Wang, Kang L.
AU  - Radetić, Tamara
AU  - Gronsky, Ronald
PY  - 1999
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7273
AB  - We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 
 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots.
PB  - American Institute of Physics Inc.
T2  - Applied Physics Letters
T1  - Raman scattering from a self-organized Ge dot superlattice
EP  - 1865
IS  - 13
SP  - 1863
VL  - 74
DO  - 10.1063/1.123694
ER  - 

@article{
author = "Liu, Jianlin L. and Tang, Yinsheng S. and Wang, Kang L. and Radetić, Tamara and Gronsky, Ronald",
year = "1999",
abstract = "We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 
 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots.",
publisher = "American Institute of Physics Inc.",
journal = "Applied Physics Letters",
title = "Raman scattering from a self-organized Ge dot superlattice",
pages = "1865-1863",
number = "13",
volume = "74",
doi = "10.1063/1.123694"
}

Liu, J. L., Tang, Y. S., Wang, K. L., Radetić, T.,& Gronsky, R.. (1999). Raman scattering from a self-organized Ge dot superlattice. in Applied Physics Letters
American Institute of Physics Inc.., 74(13), 1863-1865.
https://doi.org/10.1063/1.123694

Liu JL, Tang YS, Wang KL, Radetić T, Gronsky R. Raman scattering from a self-organized Ge dot superlattice. in Applied Physics Letters. 1999;74(13):1863-1865.
doi:10.1063/1.123694 .

Liu, Jianlin L., Tang, Yinsheng S., Wang, Kang L., Radetić, Tamara, Gronsky, Ronald, "Raman scattering from a self-organized Ge dot superlattice" in Applied Physics Letters, 74, no. 13 (1999):1863-1865,
https://doi.org/10.1063/1.123694 . .

TY  - JOUR
AU  - Liu, Jianlin L.
AU  - Wu, Wen G.
AU  - Tang, Yinsheng S.
AU  - Wang, Kang L.
AU  - Radetić, Tamara
AU  - Gronsky, Ronald
PY  - 1999
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/7276
AB  - Multiple boron-doped Ge quantum dots are investigated. The structure, which consists of 20 periods of Ge quantum dots stacked with 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy are used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, the strong inter-sub-level transition in the Ge quantum dots is observed. The transition is further confirmed by Fourier transform infrared spectroscopy using a waveguide geometry. The observed peak at 5 μm in the infrared absorption spectrum is consistent with that in the Raman spectrum and attributed to the transition between the first two heavy hole band states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This study suggests the possible use of Ge quantum dots for infrared detector application.
PB  - American Institute of Physics Inc.
PB  - American Vacuum Society
T2  - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T1  - Raman scattering and infrared absorption in multiple boron-doped Ge dots
EP  - 1424
IS  - 4
SP  - 1420
VL  - 17
DO  - 10.1116/1.581830
ER  - 

@article{
author = "Liu, Jianlin L. and Wu, Wen G. and Tang, Yinsheng S. and Wang, Kang L. and Radetić, Tamara and Gronsky, Ronald",
year = "1999",
abstract = "Multiple boron-doped Ge quantum dots are investigated. The structure, which consists of 20 periods of Ge quantum dots stacked with 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy are used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, the strong inter-sub-level transition in the Ge quantum dots is observed. The transition is further confirmed by Fourier transform infrared spectroscopy using a waveguide geometry. The observed peak at 5 μm in the infrared absorption spectrum is consistent with that in the Raman spectrum and attributed to the transition between the first two heavy hole band states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This study suggests the possible use of Ge quantum dots for infrared detector application.",
publisher = "American Institute of Physics Inc., American Vacuum Society",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
title = "Raman scattering and infrared absorption in multiple boron-doped Ge dots",
pages = "1424-1420",
number = "4",
volume = "17",
doi = "10.1116/1.581830"
}

Liu, J. L., Wu, W. G., Tang, Y. S., Wang, K. L., Radetić, T.,& Gronsky, R.. (1999). Raman scattering and infrared absorption in multiple boron-doped Ge dots. in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
American Institute of Physics Inc.., 17(4), 1420-1424.
https://doi.org/10.1116/1.581830

Liu JL, Wu WG, Tang YS, Wang KL, Radetić T, Gronsky R. Raman scattering and infrared absorption in multiple boron-doped Ge dots. in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999;17(4):1420-1424.
doi:10.1116/1.581830 .

Liu, Jianlin L., Wu, Wen G., Tang, Yinsheng S., Wang, Kang L., Radetić, Tamara, Gronsky, Ronald, "Raman scattering and infrared absorption in multiple boron-doped Ge dots" in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17, no. 4 (1999):1420-1424,
https://doi.org/10.1116/1.581830 . .