Преглед Tehnološko-metalurški fakultet аутора: "Lukić, Petar M."
Приказ резултата 1-20 од 24
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4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
Abood, Imhammad; Lukić, Petar M.; Šašić, Rajko; Alkoash, Abed Alkhem; Ostojić, Stanko M. (Natl Inst Optoelectronics, Bucharest-Magurele, 2013) -
4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis
Alkhem, Abdel; Šašić, Rajko; Lukić, Petar M.; Ostojić, Stanko M. (IOP Publishing Ltd, Bristol, 2014) -
Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
Abood, Imhimmad; Šašić, Rajko; Ostojić, Stanko M.; Lukić, Petar M. (IOP Publishing Ltd, Bristol, 2013) -
Analytical model of a Si TFT with cylindrical source and drain
Ramović, Rifat M.; Lukić, Petar M.; Šašić, Rajko; Ostojić, Stanko M. (IEEE, New York, 2008) -
Analytical model of CNT FET current-voltage characteristics
Vasić, Dušan B.; Lukić, Petar M.; Lukić, Vladan M.; Šašić, Rajko (Natl Inst Optoelectronics, Bucharest-Magurele, 2012) -
Analytical model of electric field in heterojunction region of HFET structure
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (Natl Inst Optoelectronics, Bucharest-Magurele, 2005) -
Analytical model of MIS structure in electron devices / Analitički model MIS strukture u elektronskim napravama
Lukić, Vladan M.; Lukić, Petar M.; Šašić, Rajko (Savez inženjera i tehničara Srbije, Beograd, 2010) -
Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
Lukić, Petar M.; Šašić, Rajko; Lončar, Boris; Zunjić, A. G. (Natl Inst Optoelectronics, Bucharest-Magurele, 2011) -
Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance / Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture
Lukić, Vladan M.; Lukić, Petar M.; Šašić, Rajko (Savez inženjera i tehničara Srbije, Beograd, 2009) -
Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics / Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC
Haber, Aleksandar M.; Lukić, Petar M.; Šašić, Rajko (Savez inženjera i tehničara Srbije, Beograd, 2007) -
Conduction mechanism based model of organic field effect transistor structure
Šašić, Rajko; Lukić, Petar M. (8th Conference of the Yugoslav Materials Research Society, 2007) -
HEMT carrier mobility analytical model
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (6th Conference of the Yugoslav Materials Research Society, YUCOMAT VI: Current Research in Advanced Materials and Processes, 2005) -
An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
Alkoash, Abed Alkhem; Šašić, Rajko; Ostojić, Stanko M.; Lukić, Petar M. (Amer Scientific Publishers, Stevenson Ranch, 2011) -
The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
Šašić, Rajko; Lukić, Petar M.; Ostojić, Stanko M.; Alkoash, Abed Alkhem (Natl Inst Optoelectronics, Bucharest-Magurele, 2010) -
Modeling and investigation of SiGe based MOSFET structure transport characteristics
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (8th Conference of the Yugoslav Materials Research Society, 2007) -
Modeling and optimization of reliability of one redundant computer network
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (EUROCON 2005 - The International Conference on Computer as a Tool, 2005) -
Modeling of carriers mobility impact on CNT FIET current-voltage characteristics
Lukić, Petar M.; Šašić, Rajko (Natl Inst Optoelectronics, Bucharest-Magurele, 2014) -
New analytical HFET I-V characteristics model
Šašić, Rajko; Lukić, Petar M.; Ramović, Rifat M. (Natl Inst Optoelectronics, Bucharest-Magurele, 2006) -
A new threshold voltage analytical model of strained Si/SiGe MOSFET
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (IEEE, Electron Devices Soc & Reliability Group, New York, 2006) -
A new threshold voltage analytical model of strained Si/SiGe MOSFET
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (2006 25th International Conference on Microelectronics, MIEL 2006, 2006)