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New analytical HFET I-V characteristics model
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET ...
The particle distribution functions and applications
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
The new generalized logarithmic equation defined by four parameters, called LG4, was formulated and proposed for describing particle size and shape distributions. For special choice of the parameters the LG4 was reduced ...
Influence of composition of the magnetic composite coating on the performance of the optical fiber magnetic field sensing element
(Natl Inst Optoelectronics, Bucharest-Magurele, 2007)
The optical fiber magnetic sensing element (OFMSE) based on the optical fiber coated with composite coating polymer-magnetic powder has been already introduced in magnetic field sensing. In this research, the rapid quenched ...
Nanomechanical properties evaluation of bioactive glass coatings on titanium alloy substrate
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
Bioinert metallic implants such as titanium and titanium alloys could be coated with bioactive materials with good adhesion to metal and which could be also bonded to the bone. In order to predict the mechanical behavior ...
Surface carriers' concentration dynamics caused by a small alternating applied voltage
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has ...
TIMS and MALDI TOF of endohedral Li-n"C-70 (n=1-3) metallofullerenes
(Natl Inst Optoelectronics, Bucharest-Magurele, 2008)
Using the ion implantation technique (introducing negatively charged fullerene into a low temperature lithium plasma column by a strong axial magnetic field) endohedral fullerenes Li"C-70, Li-2"C-70 and Li-3"C-70 were ...
Analytical model of electric field in heterojunction region of HFET structure
(Natl Inst Optoelectronics, Bucharest-Magurele, 2005)
A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two-dimensional electron gas and surface ...
Novel approach to the investigation of carriers' concentration in various semiconductor structures
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
In this paper modern approach to the investigation of carriers' concentration applicable to various semiconductor structures has been developed. The model has exploited transport equation with the quantum correction term ...
Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field
(Natl Inst Optoelectronics, Bucharest-Magurele, 2006)
The aim of this paper is to find the possibility for improvement of gas-filled surge arresters (GFSA) characteristics in y and X radiation field by appropriate choice of electrode materials. For that purpose electrodes ...
Electrodeposited hydroxyapatite thin films modified by ion beam irradiation
(Natl Inst Optoelectronics, Bucharest-Magurele, 2009)
Surface modification of hydroxyapatite (HA) thin films electrodeposited on titanium was conducted by ion implantation, using nitrogen and argon ions at different constant fluences of 1x10(15), 1x10(16) and 1x10(17) ions/cm(2). ...