Преглед Radovi istraživača / Researchers’ publications (TMF) аутора: "Šašić, Rajko"
Приказ резултата 1-20 од 41
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2D model of pseudomorphic InGaAs/InAlAs HEMT's structure
Ramović, Rifat M.; Šašić, Rajko; Andrin, R (Trans Tech-Scitec Publications Ltd, Durnten-Zurich, 1998) -
4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
Abood, Imhammad; Lukić, Petar M.; Šašić, Rajko; Alkoash, Abed Alkhem; Ostojić, Stanko M. (Natl Inst Optoelectronics, Bucharest-Magurele, 2013) -
4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis
Alkhem, Abdel; Šašić, Rajko; Lukić, Petar M.; Ostojić, Stanko M. (IOP Publishing Ltd, Bristol, 2014) -
An analytical 3-D model for small dimensions MOSFETs' threshold voltage
Pilja, D.Z.; Šašić, Rajko; Ramović, Rifat M.; Tjapkin, D.A. (2000 22nd International Conference on Microelectronics, MIEL 2000, 2000) -
Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
Abood, Imhimmad; Šašić, Rajko; Ostojić, Stanko M.; Lukić, Petar M. (IOP Publishing Ltd, Bristol, 2013) -
Analytical model of a Si TFT with cylindrical source and drain
Ramović, Rifat M.; Lukić, Petar M.; Šašić, Rajko; Ostojić, Stanko M. (IEEE, New York, 2008) -
Analytical model of CNT FET current-voltage characteristics
Vasić, Dušan B.; Lukić, Petar M.; Lukić, Vladan M.; Šašić, Rajko (Natl Inst Optoelectronics, Bucharest-Magurele, 2012) -
Analytical model of electric field in heterojunction region of HFET structure
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (Natl Inst Optoelectronics, Bucharest-Magurele, 2005) -
Analytical model of MIS structure in electron devices / Analitički model MIS strukture u elektronskim napravama
Lukić, Vladan M.; Lukić, Petar M.; Šašić, Rajko (Savez inženjera i tehničara Srbije, Beograd, 2010) -
Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
Lukić, Petar M.; Šašić, Rajko; Lončar, Boris; Zunjić, A. G. (Natl Inst Optoelectronics, Bucharest-Magurele, 2011) -
Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance / Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture
Lukić, Vladan M.; Lukić, Petar M.; Šašić, Rajko (Savez inženjera i tehničara Srbije, Beograd, 2009) -
Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics / Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC
Haber, Aleksandar M.; Lukić, Petar M.; Šašić, Rajko (Savez inženjera i tehničara Srbije, Beograd, 2007) -
Conduction mechanism based model of organic field effect transistor structure
Šašić, Rajko; Lukić, Petar M. (8th Conference of the Yugoslav Materials Research Society, 2007) -
Determination of multiaxial stress linear dimensional change of textile surfaces / Određivanje promene linearnih dimenzija tekstilnih površina pri multiaksijalnom naprezanju
Mihajlidi, Tatjana; Milosavljević, Svetlana V.; Šašić, Rajko; Asanović, Koviljka; Nikolić, D. M. (Savez inženjera i tehničara tekstilaca Srbije, 1999) -
The flow of the viscous fluid around the sphere in the range Re {similar or less-than} 2
Šašić, Rajko; Sasić, M. (Springer Wien, Wien, 1992) -
Graphic simulation of STM images of Si(111)7X7 surface
Raić, Karlo; Šašić, Rajko; Petkovska, Menka (Trans Tech Publications Ltd., 1997) -
HEMT carrier mobility analytical model
Lukić, Petar M.; Ramović, Rifat M.; Šašić, Rajko (6th Conference of the Yugoslav Materials Research Society, YUCOMAT VI: Current Research in Advanced Materials and Processes, 2005) -
An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
Alkoash, Abed Alkhem; Šašić, Rajko; Ostojić, Stanko M.; Lukić, Petar M. (Amer Scientific Publishers, Stevenson Ranch, 2011) -
Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field
Lončar, Boris; Osmokrović, P.; Stanković, Srboljub J.; Šašić, Rajko (Natl Inst Optoelectronics, Bucharest-Magurele, 2006) -
Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics
Lončar, Boris; Osmokrović, P.; Vasić, A.; Šašić, Rajko (IEEE, Electron Devices Soc & Reliability Group, New York, 2006)