Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept

dc.creator	Valentini, Luca
dc.creator	Cardinali, Marta
dc.creator	Grković, Mirjana
dc.creator	Uskoković, Petar
dc.creator	Alimenti, Federico
dc.creator	Roselli, Luca
dc.creator	Kenny, Jose M.
dc.date.accessioned	2021-03-10T12:09:03Z
dc.date.available	2021-03-10T12:09:03Z
dc.date.issued	2013
dc.identifier.issn	1947-2935
dc.identifier.uri	http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2421
dc.description.abstract	In this paper we report: the use of graphene oxide in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.	en
dc.publisher	Amer Scientific Publishers, Valencia
dc.rights	restrictedAccess
dc.source	Science of Advanced Materials
dc.subject	Graphene Oxide	en
dc.subject	Flexible Electronics	en
dc.subject	Electrical Properties	en
dc.subject	Surface Wettability	en
dc.title	Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept	en
dc.type	article
dc.rights.license	ARR
dc.citation.epage	533
dc.citation.issue	5
dc.citation.other	5(5): 530-533
dc.citation.rank	M21
dc.citation.spage	530
dc.citation.volume	5
dc.identifier.doi	10.1166/sam.2013.1484
dc.identifier.scopus	2-s2.0-84880955345
dc.identifier.wos	000322604700015
dc.type.version	publishedVersion

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