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An analytical 3-D model for small dimensions MOSFETs' threshold voltage
dc.creator | Pilja, D.Z. | |
dc.creator | Šašić, Rajko | |
dc.creator | Ramović, Rifat M. | |
dc.creator | Tjapkin, D.A. | |
dc.date.accessioned | 2021-03-10T09:50:28Z | |
dc.date.available | 2021-03-10T09:50:28Z | |
dc.date.issued | 2000 | |
dc.identifier.isbn | 978-078035235-3 | |
dc.identifier.uri | http://TechnoRep.tmf.bg.ac.rs/handle/123456789/276 | |
dc.description.abstract | This paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed. | en |
dc.publisher | 2000 22nd International Conference on Microelectronics, MIEL 2000 | |
dc.rights | restrictedAccess | |
dc.source | 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings | |
dc.title | An analytical 3-D model for small dimensions MOSFETs' threshold voltage | en |
dc.type | conferenceObject | |
dc.rights.license | ARR | |
dc.citation.epage | 220 | |
dc.citation.other | 1: 217-220 | |
dc.citation.spage | 217 | |
dc.citation.volume | 1 | |
dc.identifier.doi | 10.1109/ICMEL.2000.840559 | |
dc.identifier.scopus | 2-s2.0-0033297878 | |
dc.type.version | publishedVersion |