TY  - JOUR
AU  - Ostojić, Stanko M.
AU  - Šašić, Rajko
PY  - 2016
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/3450
AB  - A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET
EP  - 54
IS  - 1-2
SP  - 50
VL  - 10
UR  - https://hdl.handle.net/21.15107/rcub_technorep_3450
ER  - 

@article{
author = "Ostojić, Stanko M. and Šašić, Rajko",
year = "2016",
abstract = "A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET",
pages = "54-50",
number = "1-2",
volume = "10",
url = "https://hdl.handle.net/21.15107/rcub_technorep_3450"
}

Ostojić, S. M.,& Šašić, R.. (2016). A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 10(1-2), 50-54.
https://hdl.handle.net/21.15107/rcub_technorep_3450

Ostojić SM, Šašić R. A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET. in Optoelectronics and Advanced Materials-Rapid Communications. 2016;10(1-2):50-54.
https://hdl.handle.net/21.15107/rcub_technorep_3450 .

Ostojić, Stanko M., Šašić, Rajko, "A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET" in Optoelectronics and Advanced Materials-Rapid Communications, 10, no. 1-2 (2016):50-54,
https://hdl.handle.net/21.15107/rcub_technorep_3450 .

TY  - JOUR
AU  - Ostojić, Stanko M.
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Abood, Imhimmad
PY  - 2014
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2696
AB  - Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.
PB  - IOP Publishing Ltd, Bristol
T2  - Physica Scripta
T1  - Surrounding gate long channel nanowire MOSFET modelling-extended analysis
IS  - 11
VL  - 89
DO  - 10.1088/0031-8949/89/11/115802
ER  - 

@article{
author = "Ostojić, Stanko M. and Šašić, Rajko and Lukić, Petar M. and Abood, Imhimmad",
year = "2014",
abstract = "Based on the approximate solution of Poisson's equation in the case of a p-doped silicon body, an improved current-voltage characteristic model of long-channel cylindrical surrounding-gate Si nanowire MOSFET is proposed. The improvement itself considers a realistic description of the carriers' mobility degradation owing to the radial electric field and a more detailed and accurate analytical solution to the 1D Poisson's equation than the solutions available in the literature. The model is valid in the wide range of the doping concentration and shows a satisfactory level of agreement with the two-dimensional simulation results and the former models. It can also be applied to different operation regimes such as subthreshold, linear and saturation regimes.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "Surrounding gate long channel nanowire MOSFET modelling-extended analysis",
number = "11",
volume = "89",
doi = "10.1088/0031-8949/89/11/115802"
}

Ostojić, S. M., Šašić, R., Lukić, P. M.,& Abood, I.. (2014). Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta
IOP Publishing Ltd, Bristol., 89(11).
https://doi.org/10.1088/0031-8949/89/11/115802

Ostojić SM, Šašić R, Lukić PM, Abood I. Surrounding gate long channel nanowire MOSFET modelling-extended analysis. in Physica Scripta. 2014;89(11).
doi:10.1088/0031-8949/89/11/115802 .

Ostojić, Stanko M., Šašić, Rajko, Lukić, Petar M., Abood, Imhimmad, "Surrounding gate long channel nanowire MOSFET modelling-extended analysis" in Physica Scripta, 89, no. 11 (2014),
https://doi.org/10.1088/0031-8949/89/11/115802 . .

TY  - JOUR
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
PY  - 2014
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2564
AB  - In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Modeling of carriers mobility impact on CNT FIET current-voltage characteristics
EP  - 1424
IS  - 11-12
SP  - 1418
VL  - 16
UR  - https://hdl.handle.net/21.15107/rcub_technorep_2564
ER  - 

@article{
author = "Lukić, Petar M. and Šašić, Rajko",
year = "2014",
abstract = "In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier's mobility model. Modeling of carrier's mobility is exposed. Two different carriers' mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Modeling of carriers mobility impact on CNT FIET current-voltage characteristics",
pages = "1424-1418",
number = "11-12",
volume = "16",
url = "https://hdl.handle.net/21.15107/rcub_technorep_2564"
}

Lukić, P. M.,& Šašić, R.. (2014). Modeling of carriers mobility impact on CNT FIET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 16(11-12), 1418-1424.
https://hdl.handle.net/21.15107/rcub_technorep_2564

Lukić PM, Šašić R. Modeling of carriers mobility impact on CNT FIET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials. 2014;16(11-12):1418-1424.
https://hdl.handle.net/21.15107/rcub_technorep_2564 .

Lukić, Petar M., Šašić, Rajko, "Modeling of carriers mobility impact on CNT FIET current-voltage characteristics" in Journal of Optoelectronics and Advanced Materials, 16, no. 11-12 (2014):1418-1424,
https://hdl.handle.net/21.15107/rcub_technorep_2564 .

TY  - JOUR
AU  - Alkhem, Abdel
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Ostojić, Stanko M.
PY  - 2014
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2781
AB  - A conventional vertical double implanted metal-oxide-semiconductor structure contains two n+ regions beneath two symmetrically posed source biases. These n+ regions are surrounded by a p-doped layer, which itself has an abrupt transition to the vertical drift region. Owing to the existence of these p-layers, the 'drift' region has varying cross sections: it is reduced going upward from the bottom (drain bias) to the top. Such a drift region is usually described either by a three piecewise model, which begins with constant cross section that at some point starts narrowing until at some other point it becomes reduced to the region between two p-regions, or by a two piecewise model, whose narrowing region starts right above the drain bias and finishes in the manner described before. The crucial geometrical parameters of the flow profile in the drift region, such as the slope of the cross-section reducing region and the length of the narrowest (accumulation) region are widely used but never determined, or even estimated, in the available literature. In this paper, the least-action principle has been utilized successfully in order to determine the exact values of these parameters and so make the existing models closed. The proof has also been provided, which shows that the three piecewise model described the flow profile better than a two piecewise model more adequately as long as it was permitted by the length of the entire drift region (the energy necessary to restore the specific value of drain current is smaller than for the three piecewise model). The two piecewise model can be accepted in practical calculations only for higher values of drain current far from a triode regime.
PB  - IOP Publishing Ltd, Bristol
T2  - Physica Scripta
T1  - 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis
IS  - 1
VL  - 89
DO  - 10.1088/0031-8949/89/01/015803
ER  - 

@article{
author = "Alkhem, Abdel and Šašić, Rajko and Lukić, Petar M. and Ostojić, Stanko M.",
year = "2014",
abstract = "A conventional vertical double implanted metal-oxide-semiconductor structure contains two n+ regions beneath two symmetrically posed source biases. These n+ regions are surrounded by a p-doped layer, which itself has an abrupt transition to the vertical drift region. Owing to the existence of these p-layers, the 'drift' region has varying cross sections: it is reduced going upward from the bottom (drain bias) to the top. Such a drift region is usually described either by a three piecewise model, which begins with constant cross section that at some point starts narrowing until at some other point it becomes reduced to the region between two p-regions, or by a two piecewise model, whose narrowing region starts right above the drain bias and finishes in the manner described before. The crucial geometrical parameters of the flow profile in the drift region, such as the slope of the cross-section reducing region and the length of the narrowest (accumulation) region are widely used but never determined, or even estimated, in the available literature. In this paper, the least-action principle has been utilized successfully in order to determine the exact values of these parameters and so make the existing models closed. The proof has also been provided, which shows that the three piecewise model described the flow profile better than a two piecewise model more adequately as long as it was permitted by the length of the entire drift region (the energy necessary to restore the specific value of drain current is smaller than for the three piecewise model). The two piecewise model can be accepted in practical calculations only for higher values of drain current far from a triode regime.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Physica Scripta",
title = "4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis",
number = "1",
volume = "89",
doi = "10.1088/0031-8949/89/01/015803"
}

Alkhem, A., Šašić, R., Lukić, P. M.,& Ostojić, S. M.. (2014). 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis. in Physica Scripta
IOP Publishing Ltd, Bristol., 89(1).
https://doi.org/10.1088/0031-8949/89/01/015803

Alkhem A, Šašić R, Lukić PM, Ostojić SM. 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis. in Physica Scripta. 2014;89(1).
doi:10.1088/0031-8949/89/01/015803 .

Alkhem, Abdel, Šašić, Rajko, Lukić, Petar M., Ostojić, Stanko M., "4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis" in Physica Scripta, 89, no. 1 (2014),
https://doi.org/10.1088/0031-8949/89/01/015803 . .

TY  - JOUR
AU  - Abood, Imhimmad
AU  - Šašić, Rajko
AU  - Ostojić, Stanko M.
AU  - Lukić, Petar M.
PY  - 2013
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2396
AB  - Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.
PB  - IOP Publishing Ltd, Bristol
T2  - Japanese Journal of Applied Physics
T1  - Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
IS  - 9
VL  - 52
DO  - 10.7567/JJAP.52.094302
ER  - 

@article{
author = "Abood, Imhimmad and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.",
year = "2013",
abstract = "Silicon carbide (H-4-SiC as well as H-6-SiC) is known to be an anisotropic material. Among others, the transport parameters in the c-direction such as low field mobility and saturation velocity, are moderately different from those in the a- and b-directions in the case of H-4-SiC, while this difference becomes remarkable in the case of H-6-SiC. The aim of this study is to investigate the effect of this anisotropy on an analytical model for "drift region voltage drop" in a H-4-SiC vertical double implanted metal oxide semiconductor (VDIMOS) structure.",
publisher = "IOP Publishing Ltd, Bristol",
journal = "Japanese Journal of Applied Physics",
title = "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy",
number = "9",
volume = "52",
doi = "10.7567/JJAP.52.094302"
}

Abood, I., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2013). Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics
IOP Publishing Ltd, Bristol., 52(9).
https://doi.org/10.7567/JJAP.52.094302

Abood I, Šašić R, Ostojić SM, Lukić PM. Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy. in Japanese Journal of Applied Physics. 2013;52(9).
doi:10.7567/JJAP.52.094302 .

Abood, Imhimmad, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy" in Japanese Journal of Applied Physics, 52, no. 9 (2013),
https://doi.org/10.7567/JJAP.52.094302 . .

TY  - JOUR
AU  - Abood, Imhammad
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
AU  - Alkoash, Abed Alkhem
AU  - Ostojić, Stanko M.
PY  - 2013
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2417
AB  - 4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance
EP  - 333
IS  - 5-6
SP  - 329
VL  - 7
UR  - https://hdl.handle.net/21.15107/rcub_technorep_2417
ER  - 

@article{
author = "Abood, Imhammad and Lukić, Petar M. and Šašić, Rajko and Alkoash, Abed Alkhem and Ostojić, Stanko M.",
year = "2013",
abstract = "4H-SiC VDMOS is a peculiar semiconductor structure with two considerably different recognized regions. One of them is a vertical drift region, whereas the other one appears as a horizontal channel with its left and right sections corresponding to source bias. In each of these regions current-voltage characterisic can become saturated regardless of the status of the other region, thus making possible several operation modes of the considered devices. The investigation of the onset of these saturations in their order of appearance is the goal of this paper.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance",
pages = "333-329",
number = "5-6",
volume = "7",
url = "https://hdl.handle.net/21.15107/rcub_technorep_2417"
}

Abood, I., Lukić, P. M., Šašić, R., Alkoash, A. A.,& Ostojić, S. M.. (2013). 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 7(5-6), 329-333.
https://hdl.handle.net/21.15107/rcub_technorep_2417

Abood I, Lukić PM, Šašić R, Alkoash AA, Ostojić SM. 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance. in Optoelectronics and Advanced Materials-Rapid Communications. 2013;7(5-6):329-333.
https://hdl.handle.net/21.15107/rcub_technorep_2417 .

Abood, Imhammad, Lukić, Petar M., Šašić, Rajko, Alkoash, Abed Alkhem, Ostojić, Stanko M., "4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance" in Optoelectronics and Advanced Materials-Rapid Communications, 7, no. 5-6 (2013):329-333,
https://hdl.handle.net/21.15107/rcub_technorep_2417 .

TY  - JOUR
AU  - Vasić, Dušan B.
AU  - Lukić, Petar M.
AU  - Lukić, Vladan M.
AU  - Šašić, Rajko
PY  - 2012
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1980
AB  - In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Analytical model of CNT FET current-voltage characteristics
EP  - 182
IS  - 1-2
SP  - 176
VL  - 14
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1980
ER  - 

@article{
author = "Vasić, Dušan B. and Lukić, Petar M. and Lukić, Vladan M. and Šašić, Rajko",
year = "2012",
abstract = "In this paper, one of the most promising electron devices - carbon nanotube field effect transistor (CNT FET) is investigated. At the beginning, the carbon nanotube properties are presented. The main contribution of this paper is the new analytical model of CNT FET - current voltage characteristics. Developed model describes behavior of CNT FET in very good manner and, at the same time, the model is relatively simple. Using the developed model, simulations were performed. The results obtained by using proposed model are in very good agreement with already known and published ones.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Analytical model of CNT FET current-voltage characteristics",
pages = "182-176",
number = "1-2",
volume = "14",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1980"
}

Vasić, D. B., Lukić, P. M., Lukić, V. M.,& Šašić, R.. (2012). Analytical model of CNT FET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 14(1-2), 176-182.
https://hdl.handle.net/21.15107/rcub_technorep_1980

Vasić DB, Lukić PM, Lukić VM, Šašić R. Analytical model of CNT FET current-voltage characteristics. in Journal of Optoelectronics and Advanced Materials. 2012;14(1-2):176-182.
https://hdl.handle.net/21.15107/rcub_technorep_1980 .

Vasić, Dušan B., Lukić, Petar M., Lukić, Vladan M., Šašić, Rajko, "Analytical model of CNT FET current-voltage characteristics" in Journal of Optoelectronics and Advanced Materials, 14, no. 1-2 (2012):176-182,
https://hdl.handle.net/21.15107/rcub_technorep_1980 .

TY  - JOUR
AU  - Alkoash, Abed Alkhem
AU  - Šašić, Rajko
AU  - Ostojić, Stanko M.
AU  - Lukić, Petar M.
PY  - 2011
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1956
AB  - The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.
PB  - Amer Scientific Publishers, Stevenson Ranch
T2  - Journal of Computational and Theoretical Nanoscience
T1  - An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
EP  - 50
IS  - 1
SP  - 47
VL  - 8
DO  - 10.1166/jctn.2011.1657
ER  - 

@article{
author = "Alkoash, Abed Alkhem and Šašić, Rajko and Ostojić, Stanko M. and Lukić, Petar M.",
year = "2011",
abstract = "The paper presents a realistic and necessary improvement of the existing current-voltage model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of Poisson's equation and drift-diffusion model of carrier transport. The model proposed in this paper does not ignore the effect of mobility degradation due to electric field in the channel. The effects of channel length modulation and carriers' velocity saturation are discussed as well.",
publisher = "Amer Scientific Publishers, Stevenson Ranch",
journal = "Journal of Computational and Theoretical Nanoscience",
title = "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs",
pages = "50-47",
number = "1",
volume = "8",
doi = "10.1166/jctn.2011.1657"
}

Alkoash, A. A., Šašić, R., Ostojić, S. M.,& Lukić, P. M.. (2011). An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience
Amer Scientific Publishers, Stevenson Ranch., 8(1), 47-50.
https://doi.org/10.1166/jctn.2011.1657

Alkoash AA, Šašić R, Ostojić SM, Lukić PM. An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs. in Journal of Computational and Theoretical Nanoscience. 2011;8(1):47-50.
doi:10.1166/jctn.2011.1657 .

Alkoash, Abed Alkhem, Šašić, Rajko, Ostojić, Stanko M., Lukić, Petar M., "An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs" in Journal of Computational and Theoretical Nanoscience, 8, no. 1 (2011):47-50,
https://doi.org/10.1166/jctn.2011.1657 . .

TY  - JOUR
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
AU  - Lončar, Boris
AU  - Zunjić, A. G.
PY  - 2011
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1945
AB  - This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Optoelectronics and Advanced Materials-Rapid Communications
T1  - Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics
EP  - 554
IS  - 5-6
SP  - 551
VL  - 5
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1945
ER  - 

@article{
author = "Lukić, Petar M. and Šašić, Rajko and Lončar, Boris and Zunjić, A. G.",
year = "2011",
abstract = "This paper presents new results obtained by investigations of silicon carbide (SiC) based vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET). The results are described and presented by the analytical model of drift region voltage and its impact on SiC DIMOSFET current-voltage characteristics. The drift region is devided into sections. For each of them, voltage analytical model across the corresponding section is developed. Mobility dependence model on temperature and electric field is introduced. Finally, current-voltage characteristics are obtained, by using drain to surce voltage model which incorporate the mentioned partial voltages. Proposed model is based on the physics of the SiC DIMOSFET. Significant effects are taken into account, thus the model is accurate. At the same time exposed model is relatively simple. By using developed model simulations were performed. The obtained results are in very good agreement with already known and published ones..",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Optoelectronics and Advanced Materials-Rapid Communications",
title = "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics",
pages = "554-551",
number = "5-6",
volume = "5",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1945"
}

Lukić, P. M., Šašić, R., Lončar, B.,& Zunjić, A. G.. (2011). Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications
Natl Inst Optoelectronics, Bucharest-Magurele., 5(5-6), 551-554.
https://hdl.handle.net/21.15107/rcub_technorep_1945

Lukić PM, Šašić R, Lončar B, Zunjić AG. Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics. in Optoelectronics and Advanced Materials-Rapid Communications. 2011;5(5-6):551-554.
https://hdl.handle.net/21.15107/rcub_technorep_1945 .

Lukić, Petar M., Šašić, Rajko, Lončar, Boris, Zunjić, A. G., "Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics" in Optoelectronics and Advanced Materials-Rapid Communications, 5, no. 5-6 (2011):551-554,
https://hdl.handle.net/21.15107/rcub_technorep_1945 .

TY  - JOUR
AU  - Lukić, Vladan M.
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
PY  - 2010
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1608
AB  - In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form.
AB  - Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani.
PB  - Savez inženjera i tehničara Srbije, Beograd
T2  - Tehnika - Novi materijali
T1  - Analytical model of MIS structure in electron devices
T1  - Analitički model MIS strukture u elektronskim napravama
EP  - 19
IS  - 1
SP  - 15
VL  - 19
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1608
ER  - 

@article{
author = "Lukić, Vladan M. and Lukić, Petar M. and Šašić, Rajko",
year = "2010",
abstract = "In this paper the new analytical model of MIS (Metal-Insulator -Semiconductor) structure, in microelectron devices, is proposed. Presented model is relatively simple and, at the same time, the results obtained by the proposed model are in good agreement with already known ones. Developed model is modular, thus it can easily be analyzed, tested and eventually changed. Special model for carriers mobility is also proposed. The mobility dependence on temperature is also included in the proposed mobility model and therefore, temperature influence on MIS behavior. On the bases of the model that is presented, algorithm was made and simulations of electrical field potential distribution and carriers concentration in semiconductor layer of MIS structure, under influence of DC voltage, were performed. Obtained results are analyzed and presented in graphical form., Metal-izolator-poluprovodnik struktura (MIS -Metal-Insulator-Semiconductor struktura) je sastavni deo najvećeg broja savremenih elektronskih komponenti i naprava. Otuda istraživanje i analiziranje fizičkih procesa koji se odvijaju u pomenutoj strukturi ima fundamentalan značaj. U ovom radu razvijen je analitički model električnog polja, potencijala i koncentracije slobodnih nosilaca naelektrisanja u poluprovodničkom sloju (podlozi) MIS strukture. Pretpostavljeno je da su slojevi metala i izolatora veoma tanki, što odgovara standardima koji se koriste prilikom izrade savremenih elektronskih naprava. Na osnovu predloženog modela, izvršene su simulacije raspodele električnih karakteristika koje nastaju pod uticajem jednosmernog napona na metalnom sloju. Dobijeni rezultati su prikazani grafički i analizirani.",
publisher = "Savez inženjera i tehničara Srbije, Beograd",
journal = "Tehnika - Novi materijali",
title = "Analytical model of MIS structure in electron devices, Analitički model MIS strukture u elektronskim napravama",
pages = "19-15",
number = "1",
volume = "19",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1608"
}

Lukić, V. M., Lukić, P. M.,& Šašić, R.. (2010). Analytical model of MIS structure in electron devices. in Tehnika - Novi materijali
Savez inženjera i tehničara Srbije, Beograd., 19(1), 15-19.
https://hdl.handle.net/21.15107/rcub_technorep_1608

Lukić VM, Lukić PM, Šašić R. Analytical model of MIS structure in electron devices. in Tehnika - Novi materijali. 2010;19(1):15-19.
https://hdl.handle.net/21.15107/rcub_technorep_1608 .

Lukić, Vladan M., Lukić, Petar M., Šašić, Rajko, "Analytical model of MIS structure in electron devices" in Tehnika - Novi materijali, 19, no. 1 (2010):15-19,
https://hdl.handle.net/21.15107/rcub_technorep_1608 .

TY  - JOUR
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Ostojić, Stanko M.
AU  - Alkoash, Abed Alkhem
PY  - 2010
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1581
AB  - The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
EP  - 1164
IS  - 5
SP  - 1161
VL  - 12
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1581
ER  - 

@article{
author = "Šašić, Rajko and Lukić, Petar M. and Ostojić, Stanko M. and Alkoash, Abed Alkhem",
year = "2010",
abstract = "The previously developed model describing quantum correction of carriers' concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs",
pages = "1164-1161",
number = "5",
volume = "12",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1581"
}

Šašić, R., Lukić, P. M., Ostojić, S. M.,& Alkoash, A. A.. (2010). The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 12(5), 1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581

Šašić R, Lukić PM, Ostojić SM, Alkoash AA. The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs. in Journal of Optoelectronics and Advanced Materials. 2010;12(5):1161-1164.
https://hdl.handle.net/21.15107/rcub_technorep_1581 .

Šašić, Rajko, Lukić, Petar M., Ostojić, Stanko M., Alkoash, Abed Alkhem, "The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs" in Journal of Optoelectronics and Advanced Materials, 12, no. 5 (2010):1161-1164,
https://hdl.handle.net/21.15107/rcub_technorep_1581 .

TY  - JOUR
AU  - Lukić, Vladan M.
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
PY  - 2009
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1397
AB  - In this paper, the results of investigation and modeling one of the most frequently used electron component - MOSFET (Metal Oxide Semiconductor Field Effect Transistor), made of SiC, are presented. At the begging, very good characteristics and advantages that SiC has, in comparison with standard electron materials, are exposed. Than, the most important steps, in SiC MOSFET current-voltage characteristics development are proposed. Based on that models, new analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance are obtained. Achieved models describe complex physics phenomena that exist in SiC MOSFET very accurate and, at the same time, proposed models are relatively simple. Results obtained by using proposed models are in very good agreement with already known ones.
AB  - U ovom radu su prikazani rezultati istraživanja i modelovanja karakteristika jedne od danas najčešće korišćenih elektronskih komponenti MOSFETa (Metal Oxide Semiconductor Field Effect Transistor) izrađenog na bazi SiC (silicijum karbida). Najpre je ukazano na veoma dobre karakteristike i prednosti koje SiC ima u odnosu na standardne materijale koji se koriste u mikroelektronici. Zatim su predloženi najznačajniji koraci u razvijanju analitičkih modela strujno-naponskih karakteristika SiC MOSFET strukture. Na osnovu ovih modela, postavljeni su novi analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu ovog tranzistora. Korišćenjem predloženih modela izvršene su simulacije. Dobijeni rezultati su u visokom stepenu saglasni sa do sada poznatim i publikovanim.
PB  - Savez inženjera i tehničara Srbije, Beograd
T2  - Tehnika - Novi materijali
T1  - Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance
T1  - Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture
EP  - 20
IS  - 1
SP  - 15
VL  - 18
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1397
ER  - 

@article{
author = "Lukić, Vladan M. and Lukić, Petar M. and Šašić, Rajko",
year = "2009",
abstract = "In this paper, the results of investigation and modeling one of the most frequently used electron component - MOSFET (Metal Oxide Semiconductor Field Effect Transistor), made of SiC, are presented. At the begging, very good characteristics and advantages that SiC has, in comparison with standard electron materials, are exposed. Than, the most important steps, in SiC MOSFET current-voltage characteristics development are proposed. Based on that models, new analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance are obtained. Achieved models describe complex physics phenomena that exist in SiC MOSFET very accurate and, at the same time, proposed models are relatively simple. Results obtained by using proposed models are in very good agreement with already known ones., U ovom radu su prikazani rezultati istraživanja i modelovanja karakteristika jedne od danas najčešće korišćenih elektronskih komponenti MOSFETa (Metal Oxide Semiconductor Field Effect Transistor) izrađenog na bazi SiC (silicijum karbida). Najpre je ukazano na veoma dobre karakteristike i prednosti koje SiC ima u odnosu na standardne materijale koji se koriste u mikroelektronici. Zatim su predloženi najznačajniji koraci u razvijanju analitičkih modela strujno-naponskih karakteristika SiC MOSFET strukture. Na osnovu ovih modela, postavljeni su novi analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu ovog tranzistora. Korišćenjem predloženih modela izvršene su simulacije. Dobijeni rezultati su u visokom stepenu saglasni sa do sada poznatim i publikovanim.",
publisher = "Savez inženjera i tehničara Srbije, Beograd",
journal = "Tehnika - Novi materijali",
title = "Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance, Analitički modeli uticaja temperature na transkonduktansu i izlaznu konduktansu sic mosfet strukture",
pages = "20-15",
number = "1",
volume = "18",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1397"
}

Lukić, V. M., Lukić, P. M.,& Šašić, R.. (2009). Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance. in Tehnika - Novi materijali
Savez inženjera i tehničara Srbije, Beograd., 18(1), 15-20.
https://hdl.handle.net/21.15107/rcub_technorep_1397

Lukić VM, Lukić PM, Šašić R. Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance. in Tehnika - Novi materijali. 2009;18(1):15-20.
https://hdl.handle.net/21.15107/rcub_technorep_1397 .

Lukić, Vladan M., Lukić, Petar M., Šašić, Rajko, "Analytical models of temperature impact on SiC MOSFET structure transconductance and output conductance" in Tehnika - Novi materijali, 18, no. 1 (2009):15-20,
https://hdl.handle.net/21.15107/rcub_technorep_1397 .

TY  - CONF
AU  - Ramović, Rifat M.
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
AU  - Ostojić, Stanko M.
PY  - 2008
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1294
AB  - In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.
PB  - IEEE, New York
C3  - 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
T1  - Analytical model of a Si TFT with cylindrical source and drain
EP  - 
SP  - 193
DO  - 10.1109/ICMEL.2008.4559256
ER  - 

@conference{
author = "Ramović, Rifat M. and Lukić, Petar M. and Šašić, Rajko and Ostojić, Stanko M.",
year = "2008",
abstract = "In this paper a new analytical model of a silicon Thin Film Transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text. some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson's equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.",
publisher = "IEEE, New York",
journal = "2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings",
title = "Analytical model of a Si TFT with cylindrical source and drain",
pages = "-193",
doi = "10.1109/ICMEL.2008.4559256"
}

Ramović, R. M., Lukić, P. M., Šašić, R.,& Ostojić, S. M.. (2008). Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
IEEE, New York., 193-.
https://doi.org/10.1109/ICMEL.2008.4559256

Ramović RM, Lukić PM, Šašić R, Ostojić SM. Analytical model of a Si TFT with cylindrical source and drain. in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:193-.
doi:10.1109/ICMEL.2008.4559256 .

Ramović, Rifat M., Lukić, Petar M., Šašić, Rajko, Ostojić, Stanko M., "Analytical model of a Si TFT with cylindrical source and drain" in 2008 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):193-,
https://doi.org/10.1109/ICMEL.2008.4559256 . .

TY  - JOUR
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Ostojić, Stanko M.
AU  - Ramović, Rifat M.
PY  - 2008
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1261
AB  - One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has been investigated in details. In this paper we went a step further and investigated the behavior of the same quantity under combined D.C. and A.C. (alternating current). As a main result emerged that it was impossible to cause small harmonic oscillations of surface carriers' concentration around some equilibrium value regardless of applied D.C. voltage and thus imposed operating regime.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Surface carriers' concentration dynamics caused by a small alternating applied voltage
EP  - 3435
IS  - 12
SP  - 3430
VL  - 10
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1261
ER  - 

@article{
author = "Šašić, Rajko and Lukić, Petar M. and Ostojić, Stanko M. and Ramović, Rifat M.",
year = "2008",
abstract = "One of our previous papers was devoted to threshold voltage in MOSFETs and MODFETs viewed as a problem of nonlinear dynamics. The behavior of surface carriers' concentration under D.C. (direct current) applied voltage has been investigated in details. In this paper we went a step further and investigated the behavior of the same quantity under combined D.C. and A.C. (alternating current). As a main result emerged that it was impossible to cause small harmonic oscillations of surface carriers' concentration around some equilibrium value regardless of applied D.C. voltage and thus imposed operating regime.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Surface carriers' concentration dynamics caused by a small alternating applied voltage",
pages = "3435-3430",
number = "12",
volume = "10",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1261"
}

Šašić, R., Lukić, P. M., Ostojić, S. M.,& Ramović, R. M.. (2008). Surface carriers' concentration dynamics caused by a small alternating applied voltage. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 10(12), 3430-3435.
https://hdl.handle.net/21.15107/rcub_technorep_1261

Šašić R, Lukić PM, Ostojić SM, Ramović RM. Surface carriers' concentration dynamics caused by a small alternating applied voltage. in Journal of Optoelectronics and Advanced Materials. 2008;10(12):3430-3435.
https://hdl.handle.net/21.15107/rcub_technorep_1261 .

Šašić, Rajko, Lukić, Petar M., Ostojić, Stanko M., Ramović, Rifat M., "Surface carriers' concentration dynamics caused by a small alternating applied voltage" in Journal of Optoelectronics and Advanced Materials, 10, no. 12 (2008):3430-3435,
https://hdl.handle.net/21.15107/rcub_technorep_1261 .

TY  - JOUR
AU  - Raić, Karlo
AU  - Šašić, Rajko
PY  - 2007
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1082
AB  - The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 x 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 x 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.
PB  - Elsevier Science Bv, Amsterdam
T2  - Applied Surface Science
T1  - STM image visualization of Si(111) 7 x 7 surface (graphic simulation and implementation)
EP  - 4506
IS  - 10
SP  - 4501
VL  - 253
DO  - 10.1016/j.apsusc.2006.10.001
ER  - 

@article{
author = "Raić, Karlo and Šašić, Rajko",
year = "2007",
abstract = "The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 x 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 x 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.",
publisher = "Elsevier Science Bv, Amsterdam",
journal = "Applied Surface Science",
title = "STM image visualization of Si(111) 7 x 7 surface (graphic simulation and implementation)",
pages = "4506-4501",
number = "10",
volume = "253",
doi = "10.1016/j.apsusc.2006.10.001"
}

Raić, K.,& Šašić, R.. (2007). STM image visualization of Si(111) 7 x 7 surface (graphic simulation and implementation). in Applied Surface Science
Elsevier Science Bv, Amsterdam., 253(10), 4501-4506.
https://doi.org/10.1016/j.apsusc.2006.10.001

Raić K, Šašić R. STM image visualization of Si(111) 7 x 7 surface (graphic simulation and implementation). in Applied Surface Science. 2007;253(10):4501-4506.
doi:10.1016/j.apsusc.2006.10.001 .

Raić, Karlo, Šašić, Rajko, "STM image visualization of Si(111) 7 x 7 surface (graphic simulation and implementation)" in Applied Surface Science, 253, no. 10 (2007):4501-4506,
https://doi.org/10.1016/j.apsusc.2006.10.001 . .

TY  - JOUR
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
PY  - 2007
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1012
AB  - Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.
PB  - 8th Conference of the Yugoslav Materials Research Society
T2  - Materials Science Forum
T1  - Conduction mechanism based model of organic field effect transistor structure
EP  - 130
SP  - 125
VL  - 555
DO  - 10.4028/0-87849-441-3.125
ER  - 

@article{
author = "Šašić, Rajko and Lukić, Petar M.",
year = "2007",
abstract = "Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density mu(T,E,N-T) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.",
publisher = "8th Conference of the Yugoslav Materials Research Society",
journal = "Materials Science Forum",
title = "Conduction mechanism based model of organic field effect transistor structure",
pages = "130-125",
volume = "555",
doi = "10.4028/0-87849-441-3.125"
}

Šašić, R.,& Lukić, P. M.. (2007). Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum
8th Conference of the Yugoslav Materials Research Society., 555, 125-130.
https://doi.org/10.4028/0-87849-441-3.125

Šašić R, Lukić PM. Conduction mechanism based model of organic field effect transistor structure. in Materials Science Forum. 2007;555:125-130.
doi:10.4028/0-87849-441-3.125 .

Šašić, Rajko, Lukić, Petar M., "Conduction mechanism based model of organic field effect transistor structure" in Materials Science Forum, 555 (2007):125-130,
https://doi.org/10.4028/0-87849-441-3.125 . .

TY  - JOUR
AU  - Lukić, Petar M.
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko
PY  - 2007
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1008
AB  - The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.
PB  - 8th Conference of the Yugoslav Materials Research Society
T2  - Materials Science Forum
T1  - Modeling and investigation of SiGe based MOSFET structure transport characteristics
EP  - 106
SP  - 101
VL  - 555
DO  - 10.4028/0-87849-441-3.101
ER  - 

@article{
author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko",
year = "2007",
abstract = "The focus of this paper was the investigation and modeling of transport characteristics in a strained SiGe based MOSFET structure, which might be of fundamental importance for the understanding of its operating characteristics. In the investigation, carrier mobility dependence on the lateral and vertical electric field is especially considered. Carrier mobility models for long channel as well as short channel SiGe MOSFETs are also presented. Average effective electric field model is proposed taking into account impact of high electric field effects on the effective channel length. In the final effective carrier mobility model, for the short channel SiGe MOSFETs, serial drain to source resistance is included. At the same time, proposed models are relatively simple. By using the presented model, simulations were performed.",
publisher = "8th Conference of the Yugoslav Materials Research Society",
journal = "Materials Science Forum",
title = "Modeling and investigation of SiGe based MOSFET structure transport characteristics",
pages = "106-101",
volume = "555",
doi = "10.4028/0-87849-441-3.101"
}

Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2007). Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum
8th Conference of the Yugoslav Materials Research Society., 555, 101-106.
https://doi.org/10.4028/0-87849-441-3.101

Lukić PM, Ramović RM, Šašić R. Modeling and investigation of SiGe based MOSFET structure transport characteristics. in Materials Science Forum. 2007;555:101-106.
doi:10.4028/0-87849-441-3.101 .

Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "Modeling and investigation of SiGe based MOSFET structure transport characteristics" in Materials Science Forum, 555 (2007):101-106,
https://doi.org/10.4028/0-87849-441-3.101 . .

TY  - JOUR
AU  - Haber, Aleksandar M.
AU  - Lukić, Petar M.
AU  - Šašić, Rajko
PY  - 2007
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1191
AB  - In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones.
AB  - U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi.
PB  - Savez inženjera i tehničara Srbije, Beograd
T2  - Tehnika - Novi materijali
T1  - Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics
T1  - Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC
EP  - 6
IS  - 2
SP  - 1
VL  - 16
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1191
ER  - 

@article{
author = "Haber, Aleksandar M. and Lukić, Petar M. and Šašić, Rajko",
year = "2007",
abstract = "In this paper temperature dependence on current-voltage characteristics of a SiC based MOSFET structure is considered. This influence is modeled by introducing temperature impact on carrier's mobility. Proposed model includes electrical, technological and geometrical transitory parameters. The advantage of the exposed model is that it is simple and, at the same time comprehensive. The model is modular, thus it can be easily tested and eventually improved. By using the proposed model, simulations were performed. Obtained results are in a very good agreement with the already published ones., U radu je razmatran uticaj temperature na strujno-naponske karakteristike MOSFET strukture izrađene na bazi SiC, koji je analitički modelovan kroz njen uticaj na pokretljivost nosilaca. Predloženi model pored uticaja temperature obuhvata i električne, tehnološke i geometrijske parametre tranzistora. Prednost izloženog modela je, što se pored sveobuhvatnosti, odlikuje i jednostavnošću. Model je modularan, tako da se lako može testirati, menjati i eventualno unaprediti. Na bazi predstavljenog modela izvršene su simulacije. Dobijeni rezultati su saglasni sa već poznatim i dostupnim u literaturi.",
publisher = "Savez inženjera i tehničara Srbije, Beograd",
journal = "Tehnika - Novi materijali",
title = "Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics, Temperaturna zavisnost pokretljivosti nosilaca u analitičkom modelu strujno-naponskih karakteristika MOSFET strukture izrađene na bazi SiC",
pages = "6-1",
number = "2",
volume = "16",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1191"
}

Haber, A. M., Lukić, P. M.,& Šašić, R.. (2007). Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics. in Tehnika - Novi materijali
Savez inženjera i tehničara Srbije, Beograd., 16(2), 1-6.
https://hdl.handle.net/21.15107/rcub_technorep_1191

Haber AM, Lukić PM, Šašić R. Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics. in Tehnika - Novi materijali. 2007;16(2):1-6.
https://hdl.handle.net/21.15107/rcub_technorep_1191 .

Haber, Aleksandar M., Lukić, Petar M., Šašić, Rajko, "Carrier's mobility temperature dependence in analytical model of SiC based MOSFET structure current-voltage characteristics" in Tehnika - Novi materijali, 16, no. 2 (2007):1-6,
https://hdl.handle.net/21.15107/rcub_technorep_1191 .

TY  - JOUR
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Ramović, Rifat M.
AU  - Ostojić, Stanko M.
PY  - 2007
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1009
AB  - A widely known (and also very well examined) problem of threshold voltage in MOSFETs and MODFETs has been described with the tools of nonlinear dynamics. Some interesting features of such devices have been derived, together with the outstanding differences between them.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics
EP  - 2708
IS  - 9
SP  - 2703
VL  - 9
UR  - https://hdl.handle.net/21.15107/rcub_technorep_1009
ER  - 

@article{
author = "Šašić, Rajko and Lukić, Petar M. and Ramović, Rifat M. and Ostojić, Stanko M.",
year = "2007",
abstract = "A widely known (and also very well examined) problem of threshold voltage in MOSFETs and MODFETs has been described with the tools of nonlinear dynamics. Some interesting features of such devices have been derived, together with the outstanding differences between them.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics",
pages = "2708-2703",
number = "9",
volume = "9",
url = "https://hdl.handle.net/21.15107/rcub_technorep_1009"
}

Šašić, R., Lukić, P. M., Ramović, R. M.,& Ostojić, S. M.. (2007). Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 9(9), 2703-2708.
https://hdl.handle.net/21.15107/rcub_technorep_1009

Šašić R, Lukić PM, Ramović RM, Ostojić SM. Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics. in Journal of Optoelectronics and Advanced Materials. 2007;9(9):2703-2708.
https://hdl.handle.net/21.15107/rcub_technorep_1009 .

Šašić, Rajko, Lukić, Petar M., Ramović, Rifat M., Ostojić, Stanko M., "Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics" in Journal of Optoelectronics and Advanced Materials, 9, no. 9 (2007):2703-2708,
https://hdl.handle.net/21.15107/rcub_technorep_1009 .

TY  - JOUR
AU  - Lončar, Boris
AU  - Osmokrović, P.
AU  - Stanković, Srboljub J.
AU  - Šašić, Rajko
PY  - 2006
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/881
AB  - The aim of this paper is to find the possibility for improvement of gas-filled surge arresters (GFSA) characteristics in y and X radiation field by appropriate choice of electrode materials. For that purpose electrodes made of different materials were incorporated in the originally developed GFSA model. The obtained results show that both in y and X radiation fields, copper electrodes are an optimal solution, since they have the highest resistance to radiation effects. It is also shown GFSA are highly resistant to y radiation, but that X radiation leads to significant degradation of their characteristics.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field
EP  - 866
IS  - 2
SP  - 863
VL  - 8
UR  - https://hdl.handle.net/21.15107/rcub_vinar_3010
ER  - 

@article{
author = "Lončar, Boris and Osmokrović, P. and Stanković, Srboljub J. and Šašić, Rajko",
year = "2006",
abstract = "The aim of this paper is to find the possibility for improvement of gas-filled surge arresters (GFSA) characteristics in y and X radiation field by appropriate choice of electrode materials. For that purpose electrodes made of different materials were incorporated in the originally developed GFSA model. The obtained results show that both in y and X radiation fields, copper electrodes are an optimal solution, since they have the highest resistance to radiation effects. It is also shown GFSA are highly resistant to y radiation, but that X radiation leads to significant degradation of their characteristics.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field",
pages = "866-863",
number = "2",
volume = "8",
url = "https://hdl.handle.net/21.15107/rcub_vinar_3010"
}

Lončar, B., Osmokrović, P., Stanković, S. J.,& Šašić, R.. (2006). Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 8(2), 863-866.
https://hdl.handle.net/21.15107/rcub_vinar_3010

Lončar B, Osmokrović P, Stanković SJ, Šašić R. Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field. in Journal of Optoelectronics and Advanced Materials. 2006;8(2):863-866.
https://hdl.handle.net/21.15107/rcub_vinar_3010 .

Lončar, Boris, Osmokrović, P., Stanković, Srboljub J., Šašić, Rajko, "Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field" in Journal of Optoelectronics and Advanced Materials, 8, no. 2 (2006):863-866,
https://hdl.handle.net/21.15107/rcub_vinar_3010 .

TY  - JOUR
AU  - Lončar, Boris
AU  - Osmokrović, P.
AU  - Vasić, A.
AU  - Šašić, Rajko
PY  - 2006
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/992
AB  - The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.
PB  - IEEE, Electron Devices Soc & Reliability Group, New York
T2  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics
EP  - +
SP  - 631
UR  - https://hdl.handle.net/21.15107/rcub_technorep_992
ER  - 

@article{
author = "Lončar, Boris and Osmokrović, P. and Vasić, A. and Šašić, Rajko",
year = "2006",
abstract = "The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.",
publisher = "IEEE, Electron Devices Soc & Reliability Group, New York",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics",
pages = "+-631",
url = "https://hdl.handle.net/21.15107/rcub_technorep_992"
}

Lončar, B., Osmokrović, P., Vasić, A.,& Šašić, R.. (2006). Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
IEEE, Electron Devices Soc & Reliability Group, New York., 631-+.
https://hdl.handle.net/21.15107/rcub_technorep_992

Lončar B, Osmokrović P, Vasić A, Šašić R. Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:631-+.
https://hdl.handle.net/21.15107/rcub_technorep_992 .

Lončar, Boris, Osmokrović, P., Vasić, A., Šašić, Rajko, "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):631-+,
https://hdl.handle.net/21.15107/rcub_technorep_992 .

TY  - JOUR
AU  - Lukić, Petar M.
AU  - Ramović, Rifat M.
AU  - Šašić, Rajko
PY  - 2006
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/923
AB  - In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.
PB  - IEEE, Electron Devices Soc & Reliability Group, New York
T2  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - A new threshold voltage analytical model of strained Si/SiGe MOSFET
EP  - +
SP  - 505
UR  - https://hdl.handle.net/21.15107/rcub_technorep_923
ER  - 

@article{
author = "Lukić, Petar M. and Ramović, Rifat M. and Šašić, Rajko",
year = "2006",
abstract = "In this paper a new analytical threshold voltage model of a strained Si/SiGe MOSFET is presented. Developed model includes all relevant parameters and it is very precise. Besides the previously mentioned fact and the fact that exposed model describes complex physical processes, the model is relatively simple and easily applicable. Presented model is modular, thus it can be easily observed, tested and eventually improved. This model can be used for strained Si/SiGe MOSFET parameters optimization. By using the proposed model.. simulations were performed. Obtained results are in very good agreement with the already known ones.",
publisher = "IEEE, Electron Devices Soc & Reliability Group, New York",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "A new threshold voltage analytical model of strained Si/SiGe MOSFET",
pages = "+-505",
url = "https://hdl.handle.net/21.15107/rcub_technorep_923"
}

Lukić, P. M., Ramović, R. M.,& Šašić, R.. (2006). A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
IEEE, Electron Devices Soc & Reliability Group, New York., 505-+.
https://hdl.handle.net/21.15107/rcub_technorep_923

Lukić PM, Ramović RM, Šašić R. A new threshold voltage analytical model of strained Si/SiGe MOSFET. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:505-+.
https://hdl.handle.net/21.15107/rcub_technorep_923 .

Lukić, Petar M., Ramović, Rifat M., Šašić, Rajko, "A new threshold voltage analytical model of strained Si/SiGe MOSFET" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):505-+,
https://hdl.handle.net/21.15107/rcub_technorep_923 .

TY  - JOUR
AU  - Ostojić, S.
AU  - Šašić, Rajko
PY  - 2006
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/876
AB  - The new generalized logarithmic equation defined by four parameters, called LG4, was formulated and proposed for describing particle size and shape distributions. For special choice of the parameters the LG4 was reduced to the logarithmic distribution LG2 defined by two parameters which permits the selection of mean value of the distribution as the size parameter appears explicitly in the distribution function. The LG2 has been suggested as a model for size and shape distributions of the particles (the "fourth state of matter" according to Heywood's definition) as, for example, the metallic and ceramic particles which attract a good deal of public attention as new promising high-performance materials for magnetic materials and then chemical catalysts, sintering promoting materials, sensors, etc. The shape and similarity of the particle for some purposes are very important. Total volume, total surface or any other useful property of the sample, may be related to shape and size of individual particles. If all particles are geometrically similar, all the subsequent treatment is simplified substantially in terms of shape. By introducing the shape parameter of the particle, the generalized similarity and the elliptic factor of the assembly of particles the application of the LG2 for the study of the shape distribution of the projected Nd2Fe14B particles is referred in this paper.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - The particle distribution functions and applications
EP  - 1409
IS  - 4
SP  - 1402
VL  - 8
UR  - https://hdl.handle.net/21.15107/rcub_technorep_876
ER  - 

@article{
author = "Ostojić, S. and Šašić, Rajko",
year = "2006",
abstract = "The new generalized logarithmic equation defined by four parameters, called LG4, was formulated and proposed for describing particle size and shape distributions. For special choice of the parameters the LG4 was reduced to the logarithmic distribution LG2 defined by two parameters which permits the selection of mean value of the distribution as the size parameter appears explicitly in the distribution function. The LG2 has been suggested as a model for size and shape distributions of the particles (the "fourth state of matter" according to Heywood's definition) as, for example, the metallic and ceramic particles which attract a good deal of public attention as new promising high-performance materials for magnetic materials and then chemical catalysts, sintering promoting materials, sensors, etc. The shape and similarity of the particle for some purposes are very important. Total volume, total surface or any other useful property of the sample, may be related to shape and size of individual particles. If all particles are geometrically similar, all the subsequent treatment is simplified substantially in terms of shape. By introducing the shape parameter of the particle, the generalized similarity and the elliptic factor of the assembly of particles the application of the LG2 for the study of the shape distribution of the projected Nd2Fe14B particles is referred in this paper.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "The particle distribution functions and applications",
pages = "1409-1402",
number = "4",
volume = "8",
url = "https://hdl.handle.net/21.15107/rcub_technorep_876"
}

Ostojić, S.,& Šašić, R.. (2006). The particle distribution functions and applications. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 8(4), 1402-1409.
https://hdl.handle.net/21.15107/rcub_technorep_876

Ostojić S, Šašić R. The particle distribution functions and applications. in Journal of Optoelectronics and Advanced Materials. 2006;8(4):1402-1409.
https://hdl.handle.net/21.15107/rcub_technorep_876 .

Ostojić, S., Šašić, Rajko, "The particle distribution functions and applications" in Journal of Optoelectronics and Advanced Materials, 8, no. 4 (2006):1402-1409,
https://hdl.handle.net/21.15107/rcub_technorep_876 .

TY  - JOUR
AU  - Šašić, Rajko
AU  - Lukić, Petar M.
AU  - Ramović, Rifat M.
PY  - 2006
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/882
AB  - In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.
PB  - Natl Inst Optoelectronics, Bucharest-Magurele
T2  - Journal of Optoelectronics and Advanced Materials
T1  - New analytical HFET I-V characteristics model
EP  - 328
IS  - 1
SP  - 324
VL  - 8
UR  - https://hdl.handle.net/21.15107/rcub_technorep_882
ER  - 

@article{
author = "Šašić, Rajko and Lukić, Petar M. and Ramović, Rifat M.",
year = "2006",
abstract = "In this paper the new analytical model of current - voltage characteristics of a Heterostructure Field Effect Transistor (HFET), is proposed. The model is relatively simple, and at the same time, it describes complex HFET physics. In the new model, most of the parameters have a clear, physical meaning. Presented model includes HFET carrier mobility model, as well as HFET electric field model. Temperature influence is included in the model too. This model is suitable for the design and simulation of different types of HFETs. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained results, available in literature.",
publisher = "Natl Inst Optoelectronics, Bucharest-Magurele",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "New analytical HFET I-V characteristics model",
pages = "328-324",
number = "1",
volume = "8",
url = "https://hdl.handle.net/21.15107/rcub_technorep_882"
}

Šašić, R., Lukić, P. M.,& Ramović, R. M.. (2006). New analytical HFET I-V characteristics model. in Journal of Optoelectronics and Advanced Materials
Natl Inst Optoelectronics, Bucharest-Magurele., 8(1), 324-328.
https://hdl.handle.net/21.15107/rcub_technorep_882

Šašić R, Lukić PM, Ramović RM. New analytical HFET I-V characteristics model. in Journal of Optoelectronics and Advanced Materials. 2006;8(1):324-328.
https://hdl.handle.net/21.15107/rcub_technorep_882 .

Šašić, Rajko, Lukić, Petar M., Ramović, Rifat M., "New analytical HFET I-V characteristics model" in Journal of Optoelectronics and Advanced Materials, 8, no. 1 (2006):324-328,
https://hdl.handle.net/21.15107/rcub_technorep_882 .

TY  - JOUR
AU  - Lončar, Boris
AU  - Osmokrović, P.
AU  - Vasić, A.
AU  - Šašić, Rajko
PY  - 2006
UR  - http://TechnoRep.tmf.bg.ac.rs/handle/123456789/872
AB  - The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.
PB  - 2006 25th International Conference on Microelectronics, MIEL 2006
T2  - 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics
EP  - 594
SP  - 591
DO  - 10.1109/ICMEL.2006.1651036
ER  - 

@article{
author = "Lončar, Boris and Osmokrović, P. and Vasić, A. and Šašić, Rajko",
year = "2006",
abstract = "The aim of this paper is to present the electrode effects as approach for the improvement of gas filled surge arresters (GFSA) protective characteristics in the most optimal way. We examined the influence of the electrode parameters on the pulse shape characteristics. As variable parameters, we used the electrode material and the manner of electrode surface processing. The originally developed GFSA model with a composite electrode system enables a high degree of over-voltage protection without environmental contamination.",
publisher = "2006 25th International Conference on Microelectronics, MIEL 2006",
journal = "2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics",
pages = "594-591",
doi = "10.1109/ICMEL.2006.1651036"
}

Lončar, B., Osmokrović, P., Vasić, A.,& Šašić, R.. (2006). Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
2006 25th International Conference on Microelectronics, MIEL 2006., 591-594.
https://doi.org/10.1109/ICMEL.2006.1651036

Lončar B, Osmokrović P, Vasić A, Šašić R. Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics. in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:591-594.
doi:10.1109/ICMEL.2006.1651036 .

Lončar, Boris, Osmokrović, P., Vasić, A., Šašić, Rajko, "Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics" in 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):591-594,
https://doi.org/10.1109/ICMEL.2006.1651036 . .